Gallium Arsenide Wafers in stock
- Below are just some of the wother GaAs wafers that we have in stock. Diameter from less than 1" to 6". Buy as few as one wafer!
- GaAs (100), N type Te doped, 10x10 x 0.35 mm, SSP
- GaAs (100), N type Te doped, 5 x 5 x 0.35 mm, SSP
- GaAs( LEC ) Wafer (110) undoped Semi-Insulated 2"D x 2.8 mm, as cut
- GaAs, (110) ori. un-doped, 5x5x5.5-5.6mm, DSP
- GaAs, VGF Grown (110) ori. un-doped, 10x10x0.5mm, SSP
- GaAs, VGF Grown (110) ori. N type, Si-doped, 10x10x0.35mm, DSP
- GaAs Wafer - Growing Method: VGF (100) Zn doped P-type, , 2"x0.5 mm, SSP, (5.17-6.72) x 10^17 /cm^3
- GaAs Wafer - Growing Method: VGF (100) P type Zn doped , 3"x0.625 mm, SSP
- GaAs Si doped, N type, SSP, 2" dia x 0.5mm wafer
- GaAs (100) orientation, SI (semi-insulating), undoped 10x10x 0.5mm, SSP,
- GaAs - Growing Method: VGF (100) Si doped, N-type, 2" dia x 0.35mm, DSP,cc: (1.07-1.90) x 10^18 /cm^3
- GaAs , Growing Method: VGF ,(100) undoped Semi-Insulated 10x10 x0.5 mm, DSP
- GaAs - VGF (110) orientation, Zn-doped, P-type, 3" dia x 0.5mm, DSP
- GaAs , Growing Method: VGF(100) Cr- doped, SI-type, 2" dia x 0.35mm, DSP
- GaAs , Growing Method: VGF(100) Si doped, N-type, 2" dia x 0.5mm, DSP,Carrier Concentration: (3.8-6.2) x 10^16 /cm^3
- GaAs , Growing Method: VGF(100) Si doped, N-type, 3" dia x 0.625mm, DSP,Carrier Concentration: (1.4-3.96) x 10^18 /cm^3
- GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, SSP
- GaAs ,Growing Method: VGF (111)A , SI, undoped, 4" dia x 0.55 mm, DSP
- GaAs VGF Grown (110) orientation, Un-doped, Semi-Insulating, 100mm dia x 0.5mm, SSP
- GaAs Wafer , Growing Method: VGF ,(100) undoped Semi-Insulated 100mm D x0.6 mm, SSP
- GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 2"D x0.5 mm, DSP, Mechanical Grade
- GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 3"D x0.5 mm, DSP, Mechanical Grade
- GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated 4"D x (0.5-0.625) mm, DSP, Mechanical Grade
- GaAs Wafer , Growing Method: VGF, (100) undoped Semi-Insulated, 100mm D x 0.6 mm, DSP
GaAs Wafer Sale Items
We have the following GaAs substrates from leading manufacturer AXT. Act now! At these prices the wafers won't last!
GaAs Specs/Pricing
Conduct Type: S-C-N
Dopant: 2" GaAs Te Doped
Orientation: (100) 2 deg off toward [101]+/-0.5 deg
Primary Flat" (0-1-1)+/-1 deg
Secondary Flat: (101)+/-2 deg
Carrier Concentration: (0.1-0.2)E18
Resistivity: (7.4-10.)E-3
Mobility: 3600-3700
Etch Pit Density (EPD): 8,000
Laser Marking: NONE
Thickness: 485+/-25um
Surface: SSP
Qty Price
100 $29.90 each
25 $35.90 each
10 $39.90 each
5 $45.90 each
1 $59.90
We work with some of the larges Gallium Wafer supplier to Gallium Arsenide Solar Cellbring researchers low cost high quality substrates for:
- Gallium Arsenide Solar Cells
- Gallium Arsenide LED
- Microwave Frequency Integrated Circuits
- Monolithic Microwave Integrated Circuits
- Infrared Light-Emitting Diodes
- Laser Diodes
- Optical Windows
Gallium Arsenide MSDS available upon request!